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JANTXV2N3810 The Microchip Technology JANTXV2N3810 is a dual PNP bipolar transistor array. It features a 60V collector-emitter breakdown voltage and a 50mA maximum collector current.
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JANTXV2N3810

Available from 3 distributors
Mfr Name: Microchip Technology
Microchip Technology
The Microchip Technology JANTXV2N3810 is a dual PNP bipolar transistor array. It features a 60V collector-emitter breakdown voltage and a 50mA maximum collector current.
✓ Total Stock: 1,010 pcs
$ Price Range: $0.99

JANTXV2N3810 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Risen Electronics ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request On Request On Request 2026-06-29 21:33:16
Hybrid Electronics ✓
Non-Authorised Inventory information
6 pcs
On Request
6 pcs On Request 1 On Request On Request On Request On Request On Request
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
4 pcs
On Request
4 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

JANTXV2N3810 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Lead Spacing
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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JANTXV2N3810 Description

Short technical summary and product information.

The JANTXV2N3810 from Microchip Technology is a dual PNP bipolar transistor array designed for through-hole mounting. This component offers a collector-emitter breakdown voltage of 60V and a maximum collector current of 50mA.

 

Key electrical characteristics include a Vce Saturation of 250mV at 100µA/1mA and a minimum DC Current Gain (hFE) of 150 at 1mA/5V. The device has a power rating of 350mW and an operating temperature range of -65°C to 200°C.

 

Packaged in a TO-78-6 metal can, the JANTXV2N3810 is suitable for applications requiring reliable PNP transistor functionality. Its through-hole mounting type facilitates integration into various circuit designs.

JANTXV2N3810 Quick Information

Product Type: Bipolar Transistor Array
Canonical Name: Microchip Technology JANTXV2N3810 Bipolar Transistor Array
Subcategory: Bipolar (BJT) - Arrays

JANTXV2N3810 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

JANTXV2N3810 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

JANTXV2N3810 Features

  • Dual PNP bipolar transistor array.
  • 60V collector-emitter breakdown voltage.
  • 50mA maximum collector current.
  • TO-78-6 metal can package.
  • Through-hole mounting type.

JANTXV2N3810 Applications

  • Suitable for switching and amplification circuits.
  • Used in low-power electronic switching applications.
  • Ideal for signal processing in consumer electronics.
  • Applicable in automotive and industrial control systems.

JANTXV2N3810 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range for the JANTXV2N3810?

-65°C to 200°C (TJ)

What is the package type for the JANTXV2N3810?

TO-78-6 Metal Can

What is the RoHS status of the JANTXV2N3810?

RoHS3 Compliant

What is the Moisture Sensitivity Level (MSL) for the JANTXV2N3810?

1 Unlimited

What is the collector-emitter breakdown voltage for the JANTXV2N3810?

60V

What is the maximum collector current for the JANTXV2N3810?

50mA

What is the minimum DC Current Gain (hFE) for the JANTXV2N3810?

150 @ 1mA, 5V

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