| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7 pcs
|
7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Military Grade | |
| Number of Pins |
The JANTXV2N3637 is a small signal bipolar junction transistor (BJT) manufactured by Raytheon. This PNP silicon transistor is designed for general-purpose applications and features a collector-emitter voltage (V(BR)CEO) of 175V and a maximum collector current (I(C)) of 1A.
The component is housed in a TO-39 (TO-205AD) package, which is a common metal can package suitable for through-hole mounting. It has 3 pins.
This transistor is classified under the JANTX series, indicating its suitability for demanding applications. Its RoHS3 compliance status is noted, though this data is unverified.
Similar parts exist with slight variations in specifications, and careful review of datasheets is recommended for direct replacements.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The JANTXV2N3637 has a maximum collector current of 1A.
The JANTXV2N3637 has a V(BR)CEO of 175V.
The JANTXV2N3637 is supplied in a TO-39 package.
The JANTXV2N3637 has 3 pins.