JANTXV2N3637 The JANTXV2N3637 is a PNP Silicon BJT transistor from Raytheon. It features a 175V V(BR)CEO and a 1A collector current, housed in a TO-39 package.
Mfr Part #:

JANTXV2N3637

Available from 1 distributors
Mfr Name: Raytheon
Raytheon
The JANTXV2N3637 is a PNP Silicon BJT transistor from Raytheon. It features a 175V V(BR)CEO and a 1A collector current, housed in a TO-39 package.
✓ Total Stock: 7 pcs
$ Price Range: $0.11

JANTXV2N3637 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7 pcs
7 pcs On Request 1 On Request On Request On Request On Request On Request

JANTXV2N3637 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Military Grade
Number of Pins

JANTXV2N3637 Description

Short technical summary and product information.

The JANTXV2N3637 is a small signal bipolar junction transistor (BJT) manufactured by Raytheon. This PNP silicon transistor is designed for general-purpose applications and features a collector-emitter voltage (V(BR)CEO) of 175V and a maximum collector current (I(C)) of 1A.

 

The component is housed in a TO-39 (TO-205AD) package, which is a common metal can package suitable for through-hole mounting. It has 3 pins.

 

This transistor is classified under the JANTX series, indicating its suitability for demanding applications. Its RoHS3 compliance status is noted, though this data is unverified.

 

Similar parts exist with slight variations in specifications, and careful review of datasheets is recommended for direct replacements.

JANTXV2N3637 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: JANTX
Canonical Name: JANTXV2N3637 PNP Silicon Small Signal Transistor
Subcategory: Small Signal Transistor

JANTXV2N3637 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

JANTXV2N3637 Estimated Pricing

Qty Low High
1+ $0.11 $0.11

Estimated market price range - modelled values for guidance only, not live distributor offers.

JANTXV2N3637 Features

  • PNP Silicon BJT transistor
  • 175V V(BR)CEO rating
  • 1A maximum collector current
  • TO-39 metal can package
  • RoHS3 compliant status

JANTXV2N3637 Applications

  • Used in general purpose switching circuits.
  • Suitable for small signal amplification.
  • Ideal for driver stage applications.
  • Common in power management modules.

JANTXV2N3637 FAQs

4 frequently asked questions generated from this part’s specifications.
What is the collector current rating for the JANTXV2N3637?

The JANTXV2N3637 has a maximum collector current of 1A.

What is the V(BR)CEO for the JANTXV2N3637?

The JANTXV2N3637 has a V(BR)CEO of 175V.

What package type is the JANTXV2N3637 in?

The JANTXV2N3637 is supplied in a TO-39 package.

How many pins does the JANTXV2N3637 have?

The JANTXV2N3637 has 3 pins.

JANTXV2N3637 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
View All Alternate Parts
JANTX2N2222A
JANTX2N2222A
MSC
The JANTX2N2222A is an NPN bipolar transistor from MSC, featuring 1.2W power dissipation and a 300MHz frequency. It is packaged in a TO-18 case.
View Part
JAN2N2326S
JAN2N2326S
MSC
The JAN2N2326S is a Thyristor SCR from Microsemi with a voltage rating of 200V and a current rating of 15A. It is packaged in a TO-205AD, TO-39-3 Metal Can.
View Part
JANTX2N2222A
JANTX2N2222A
Motorola Semicondutor
The JANTX2N2222A is an NPN Bipolar Transistor from Motorola Semicondutor. It features a maximum voltage of 40V and a power dissipation of 1.2W.
View Part
JANTX2N3506
JANTX2N3506
SEMICOA
The JANTX2N3506 from SEMICOA is an NPN bipolar transistor with a 40V collector-emitter breakdown voltage and 3A continuous collector current. It is suitable for applications requiring a power dissipation of up to 1W.
View Part
Home
Account

Categories