| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Microchip Technology JANTXV2N3501 is a single NPN bipolar junction transistor (BJT) suitable for electronic circuits requiring amplification or switching. This component features a maximum collector current of 300 mA and a collector-emitter breakdown voltage of 150 V.
With a maximum power dissipation of 1 W, the JANTXV2N3501 operates within a temperature range of -65°C to 200°C (TJ). Its DC current gain (hFE) is a minimum of 100 at 150mA and 10V, with a Vce saturation of 400mV maximum at 15mA and 150mA.
The transistor is housed in a TO-205AD, TO-39-3 Metal Can package and is designed for through-hole mounting. The bulk package type is suitable for industrial applications.
Compliance information indicates RoHS3 compliance, MSL 1 Unlimited, and REACH unaffected status, though these are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating temperature range is -65°C to 200°C (TJ).
The transistor is supplied in a TO-205AD, TO-39-3 Metal Can package.
It is designed for through-hole mounting.
The maximum collector current is 300 mA.
The collector-emitter breakdown voltage is 150 V.
The minimum DC current gain (hFE) is 100 at 150mA and 10V.