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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3 pcs
|
3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N3501 is an NPN bipolar junction transistor manufactured by Microchip Technology. It is designed for general-purpose amplification and switching applications. With a maximum collector-emitter voltage of 150V and a collector current rating of 300mA, this transistor can handle moderate power levels up to 1W. The DC current gain (hFE) is a minimum of 100 at 150mA collector current and 10V VCE, and the saturation voltage is a maximum of 400mV at 15mA base current and 150mA collector current. The device is housed in a TO-205AD / TO-39-3 metal can package with through-hole mounting, offering robust mechanical durability. It operates over a wide temperature range from -65°C to 200°C junction temperature, suitable for harsh environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $10.11 | $10.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage (VCEO) is 150V.
The 2N3501 is available in a TO-205AD / TO-39-3 metal can through-hole package.
The operating junction temperature range is -65°C to 200°C.
The precomputed data indicates RoHS3 Compliant, but this is unverified and conflicts with a distributor report.
The maximum collector current (IC) is 300mA.
The maximum power dissipation is 1W.
The minimum DC current gain is 100 at IC=150mA, VCE=10V.