2N3501 The 2N3501 is an NPN bipolar junction transistor from Microchip Technology. It features a 150V collector-emitter breakdown voltage, 300mA collector current, and 1W power dissipation.
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2N3501

Available from 1 distributors
Mfr Name: Microchip Technology
Microchip Technology
The 2N3501 is an NPN bipolar junction transistor from Microchip Technology. It features a 150V collector-emitter breakdown voltage, 300mA collector current, and 1W power dissipation.
Total Stock: 3 pcs
$ Price Range: $10.11

2N3501 Available from 1 distributor

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2N3501 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2N3501 Description

Short technical summary and product information.

The 2N3501 is an NPN bipolar junction transistor manufactured by Microchip Technology. It is designed for general-purpose amplification and switching applications. With a maximum collector-emitter voltage of 150V and a collector current rating of 300mA, this transistor can handle moderate power levels up to 1W. The DC current gain (hFE) is a minimum of 100 at 150mA collector current and 10V VCE, and the saturation voltage is a maximum of 400mV at 15mA base current and 150mA collector current. The device is housed in a TO-205AD / TO-39-3 metal can package with through-hole mounting, offering robust mechanical durability. It operates over a wide temperature range from -65°C to 200°C junction temperature, suitable for harsh environments.

2N3501 Quick Information

Product Type: NPN Bipolar Transistor
Canonical Name: Microchip Technology 2N3501 NPN Bipolar Transistor
Subcategory: Single Transistor

2N3501 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N3501 Estimated Pricing

Qty Low High
1+ $10.11 $10.11

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N3501 Features

  • NPN bipolar transistor with 150V breakdown voltage.
  • Collector current rating of 300mA.
  • 1W power dissipation capacity.
  • Minimum DC current gain of 100 at 150mA.
  • TO-39 metal can package for robust mounting.

2N3501 Applications

  • Used in general-purpose amplification circuits.
  • Suitable for low-power switching applications.
  • Ideal for high-temperature industrial environments.
  • Can be used in linear voltage regulators.
  • Applicable in audio amplifier stages.

2N3501 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum operating voltage of the 2N3501 transistor?

The maximum collector-emitter breakdown voltage (VCEO) is 150V.

What is the package type of the 2N3501?

The 2N3501 is available in a TO-205AD / TO-39-3 metal can through-hole package.

What is the operating temperature range of the 2N3501?

The operating junction temperature range is -65°C to 200°C.

What is the RoHS status of the 2N3501?

The precomputed data indicates RoHS3 Compliant, but this is unverified and conflicts with a distributor report.

What is the maximum collector current of the 2N3501?

The maximum collector current (IC) is 300mA.

What is the power dissipation of the 2N3501?

The maximum power dissipation is 1W.

What is the DC current gain (hFE) of the 2N3501?

The minimum DC current gain is 100 at IC=150mA, VCE=10V.

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