JANTX2N6798 The JANTX2N6798 is an N-Channel Power MOSFET from MSC, featuring HEXFET technology for high performance. It offers a 200V breakdown voltage and low on-resistance.
Mfr Part #:

JANTX2N6798

Available from 1 distributors
Mfr Name: MSC
MSC
The JANTX2N6798 is an N-Channel Power MOSFET from MSC, featuring HEXFET technology for high performance. It offers a 200V breakdown voltage and low on-resistance.
✓ Total Stock: 170 pcs
$ Price Range: $2.93

JANTX2N6798 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
170 pcs
170 pcs On Request 1 On Request On Request 1326 On Request On Request

JANTX2N6798 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Military Grade
Mounting Type
SVHC Present

JANTX2N6798 Description

Short technical summary and product information.

The JANTX2N6798 is a high-reliability N-Channel Power MOSFET manufactured by MSC, utilizing HEXFET technology. This device is designed for demanding applications requiring efficient power switching.

 

Key electrical specifications include a Drain-to-Source Breakdown Voltage (BVDSS) of 200V and a Static Drain-to-Source On-Resistance (RDS(on)) of 0.40 Ohms at a gate-source voltage of 10V and a continuous drain current of 5.5A. It can handle a continuous drain current of 3.5A at 100°C case temperature and a pulsed drain current of up to 22A. The maximum power dissipation is rated at 25W at 25°C case temperature.

 

This MOSFET is suitable for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits. It features repetitive avalanche ratings and dynamic dv/dt rating, along with simple drive requirements. The device is hermetically sealed and rated for an ESD Class 1C.

 

The JANTX2N6798 is housed in a TO-39 through-hole package. It operates within a junction and storage temperature range of -55°C to +150°C. The thermal resistance from junction-to-case is a maximum of 5.0°C/W, and junction-to-ambient is typically 175°C/W.

JANTX2N6798 Quick Information

Product Type: Power MOSFET
Series: JANTX
Canonical Name: JANTX2N6798 N-Channel Power MOSFET
Subcategory: N-Channel

JANTX2N6798 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

JANTX2N6798 Estimated Pricing

Qty Low High
1+ $2.93 $2.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

JANTX2N6798 Features

  • High-reliability N-Channel Power MOSFET
  • 200V breakdown voltage
  • Low 0.40 Ohm on-resistance
  • HEXFET technology for efficiency
  • Hermetically sealed TO-39 package

JANTX2N6798 Applications

  • Switching power supplies
  • Motor controls
  • Inverters and choppers
  • Audio amplifiers
  • High energy pulse circuits

JANTX2N6798 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the JANTX2N6798?

The Drain-to-Source Breakdown Voltage (BVDSS) is 200V.

What is the on-resistance of the JANTX2N6798?

The Static Drain-to-Source On-Resistance (RDS(on)) is a maximum of 0.40 Ohms at VGS = 10V and ID = 5.5A.

What is the continuous drain current for the JANTX2N6798?

The continuous drain current is 5.5A at 25°C case temperature and 3.5A at 100°C case temperature.

What is the operating temperature range for the JANTX2N6798?

The operating junction and storage temperature range is -55°C to +150°C.

What package type is the JANTX2N6798 available in?

The JANTX2N6798 is available in a TO-39 package, designed for through-hole mounting.

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