| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,375 pcs
|
2375 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-06-29 21:33:16 |
| Category | |
| Manufacturer Name | |
| Military Grade | |
| Mounting Type | |
| SVHC Present |
The Vishay Dale JANTX2N6798 is a high-reliability N-Channel Power MOSFET utilizing HEXFET technology. This device is designed for demanding applications requiring robust performance and stability.
Key electrical specifications include a drain-to-source breakdown voltage (BVDSS) of 200V and a low static drain-to-source on-resistance (RDS(on)) of 0.40 Ohms at a gate-to-source voltage of 10V and a continuous drain current of 5.5A. It also features a continuous drain current of 3.5A at 100°C case temperature and a pulsed drain current (IDM) of 22A. The maximum power dissipation (PD) is rated at 25W at 25°C case temperature.
This MOSFET is suitable for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits. It offers simple drive requirements and features repetitive avalanche ratings and dynamic dv/dt rating.
The JANTX2N6798 comes in a hermetically sealed TO-205AF (TO-39) package and is designed for through-hole mounting. The operating junction and storage temperature range is -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage (BVDSS) is 200V minimum at VGS = 0V and ID = 1.0mA.
The continuous drain current is 5.5A at TC = 25°C, derated to 3.5A at TC = 100°C.
It is available in a TO-205AF (TO-39) through-hole package.
The operating junction and storage temperature range is -55 to +150°C.
The maximum static drain-to-source on-resistance is 0.40Ω at VGS = 10V and ID = 5.5A.
The gate threshold voltage ranges from 2.0V to 4.0V at VDS = VGS and ID = 250µA.
Yes, it is rated Class 1C per MIL-STD-750, Method 1020.