JANTX2N6798 The Vishay Dale JANTX2N6798 is an N-Channel Power MOSFET featuring HEXFET technology. It offers a 200V breakdown voltage and a 0.40 Ohm on-resistance.
Mfr Part #:

JANTX2N6798

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale JANTX2N6798 is an N-Channel Power MOSFET featuring HEXFET technology. It offers a 200V breakdown voltage and a 0.40 Ohm on-resistance.
✓ Total Stock: 3,375 pcs
$ Price Range: $0.99

JANTX2N6798 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,375 pcs
2375 pcs On Request 1 On Request On Request 24+ On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request 2026-06-29 21:33:16

JANTX2N6798 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Military Grade
Mounting Type
SVHC Present

JANTX2N6798 Description

Short technical summary and product information.

The Vishay Dale JANTX2N6798 is a high-reliability N-Channel Power MOSFET utilizing HEXFET technology. This device is designed for demanding applications requiring robust performance and stability.

 

Key electrical specifications include a drain-to-source breakdown voltage (BVDSS) of 200V and a low static drain-to-source on-resistance (RDS(on)) of 0.40 Ohms at a gate-to-source voltage of 10V and a continuous drain current of 5.5A. It also features a continuous drain current of 3.5A at 100°C case temperature and a pulsed drain current (IDM) of 22A. The maximum power dissipation (PD) is rated at 25W at 25°C case temperature.

 

This MOSFET is suitable for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits. It offers simple drive requirements and features repetitive avalanche ratings and dynamic dv/dt rating.

 

The JANTX2N6798 comes in a hermetically sealed TO-205AF (TO-39) package and is designed for through-hole mounting. The operating junction and storage temperature range is -55°C to +150°C.

JANTX2N6798 Quick Information

Product Type: MOSFET
Series: JANTX
Canonical Name: JANTX2N6798 N-Channel Power MOSFET
Subcategory: Power MOSFET

JANTX2N6798 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

JANTX2N6798 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

JANTX2N6798 Features

  • 200V drain-to-source breakdown voltage.
  • Low 0.40 Ohm on-resistance.
  • 5.5A continuous drain current.
  • HEXFET technology for high performance.
  • Hermetically sealed TO-39 package.

JANTX2N6798 Applications

  • Suitable for switching power supplies.
  • Used in motor control circuits.
  • Applicable for inverters and choppers.
  • Designed for high energy pulse circuits.

JANTX2N6798 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source breakdown voltage of JANTX2N6798?

The drain-to-source breakdown voltage (BVDSS) is 200V minimum at VGS = 0V and ID = 1.0mA.

What is the continuous drain current rating?

The continuous drain current is 5.5A at TC = 25°C, derated to 3.5A at TC = 100°C.

What package type is the JANTX2N6798 available in?

It is available in a TO-205AF (TO-39) through-hole package.

What is the operating temperature range?

The operating junction and storage temperature range is -55 to +150°C.

What is the on-resistance at 10V gate drive?

The maximum static drain-to-source on-resistance is 0.40Ω at VGS = 10V and ID = 5.5A.

What is the gate threshold voltage?

The gate threshold voltage ranges from 2.0V to 4.0V at VDS = VGS and ID = 250µA.

Does the JANTX2N6798 have an ESD rating?

Yes, it is rated Class 1C per MIL-STD-750, Method 1020.

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