JANTX2N6283
Motorola Semicondutor
The JANTX2N6283 is an NPN-Darlington transistor from Motorola Semiconductor. It offers a breakdown voltage of 80V and a high DC current gain.
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60 pcs
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60 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Military Grade | |
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The JANTX2N6283 from Microsemi is a rugged NPN Darlington power transistor designed for high-current switching and amplification applications. It features a maximum collector-emitter breakdown voltage of 80V and a continuous collector current rating of 1mA (cutoff). With a minimum DC current gain (hFE) of 1500 at 1A, 3V, this device provides excellent gain for demanding loads.
The transistor is housed in a TO-204AA (TO-3) metal can package with through-hole mounting, suitable for heat sinking in high-power designs. It can dissipate up to 175W and operates over a wide junction temperature range of -65°C to 200°C. Typical Vce saturation is 3V maximum at 200mA base current and 20A collector current, making it effective for driving inductive loads.
This part is supplied in bulk packaging and is intended for use in power supply, motor control, and industrial switching circuits where high reliability is required.
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 80V.
The maximum power dissipation is 175W.
The junction temperature range is -65°C to 200°C.
It comes in a TO-204AA (TO-3) through-hole package.
The minimum DC current gain (hFE) is 1500 at 1A, 3V.
The maximum Vce saturation voltage is 3V at 200mA base, 20A collector.