| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
19 pcs
|
19 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Transistor Type |
The JANTX2N6283 is a high-performance NPN-Darlington transistor manufactured by Motorola Semiconductor. This component is designed for applications requiring significant current gain and voltage handling capabilities.
Key electrical specifications include a maximum collector-emitter breakdown voltage of 80V and a minimum DC current gain (hFE) of 1500 at 1A and 3V. The transistor exhibits a Vce saturation of 3V maximum at 200mA and 20A, with a collector cutoff current of 1mA maximum. It can handle a maximum power dissipation of 175W.
Operating within a wide temperature range from -65°C to 200°C, the JANTX2N6283 is suitable for demanding environments. It is housed in a TO-204AA (TO-3) package and utilizes a through-hole mounting type, making it compatible with traditional PCB assembly processes.
This transistor is qualified under MIL-PRF-19500/504, indicating its suitability for military and high-reliability applications. Its robust construction and specifications make it a reliable choice for power switching and amplification circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The JANTX2N6283 transistor has a collector-emitter breakdown voltage of 80V.
The minimum DC current gain (hFE) for the JANTX2N6283 is 1500 at 1A and 3V.
The JANTX2N6283 operates in a temperature range of -65°C to 200°C.
The JANTX2N6283 is supplied in a TO-204AA (TO-3) package.
The JANTX2N6283 transistor is mounted using the through-hole method.