| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8 pcs
|
8 pcs | On Request | 1 | On Request | On Request | 8635 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| Transistor Type |
The JANTX2N3585 from RCA is a high-performance NPN bipolar junction transistor (BJT) suitable for various electronic applications. This component is characterized by its robust electrical specifications, including a maximum collector-emitter breakdown voltage of 300V and a continuous collector current capability of up to 2A. Its DC current gain (hFE) is a minimum of 25 at 1A and 10V, indicating good amplification characteristics.
The transistor operates within a wide temperature range, from -65°C to 200°C, making it suitable for demanding environments. The saturation voltage (Vce) is a maximum of 750mV at 125mA and 1A, and the collector cutoff current is a maximum of 5mA. The JANTX2N3585 is housed in a TO-66 (TO-213AA) package, designed for through-hole mounting, which facilitates integration into circuit boards.
This transistor's specifications suggest its utility in power switching, amplification, and general-purpose discrete applications where high voltage and moderate current handling are required. The military grade qualification (MIL-PRF-19500/384) further indicates its suitability for applications demanding high reliability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
300V
2A
2.5W
Minimum 25 at Ic=1A, Vce=10V
Maximum 750mV at Ib=125mA, Ic=1A
-65°C to 200°C junction temperature
TO-66 through-hole