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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
75 pcs
|
75 pcs | On Request | 1 | On Request | On Request | 0538 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current - Collector Cutoff | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The JANTX2N3500 from Microchip Technology is a single NPN bipolar junction transistor (BJT) suitable for various electronic applications. It is designed for through-hole mounting and comes in a TO-39 (TO-205AD) metal can package.
Key electrical specifications include a maximum collector-emitter breakdown voltage of 150V and a continuous collector current rating of 300mA. The transistor exhibits a minimum DC current gain (hFE) of 40 at 150mA and 10V. Its Vce saturation is a maximum of 400mV at 15mA and 150mA, with a maximum collector cutoff current (ICBO) of 10μA.
This component operates within a wide temperature range of -65°C to 200°C (TJ), making it suitable for demanding environments. The maximum power dissipation is rated at 1W.
Compliance information indicates RoHS3 compliance, an MSL of 1, and REACH unaffected status, though these are noted as unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating temperature range is -65°C to 200°C (TJ).
The transistor is supplied in a TO-39 (TO-205AD) metal can package.
The maximum collector current is 300 mA.
The collector-emitter breakdown voltage is 150 V.
The minimum DC current gain (hFE) is 40 at 150mA and 10V.