JAN2N3500 The Microchip Technology JAN2N3500 is an NPN bipolar transistor with a 150V collector-emitter breakdown voltage and a continuous collector current of 300mA. It is designed for through-hole mounting.
Mfr Part #:

JAN2N3500

Available from 1 distributors
Mfr Name: Microchip Technology
Microchip Technology
The Microchip Technology JAN2N3500 is an NPN bipolar transistor with a 150V collector-emitter breakdown voltage and a continuous collector current of 300mA. It is designed for through-hole mounting.
Total Stock: 75 pcs
$ Price Range: $0.99

JAN2N3500 Available from 1 distributor

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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75 pcs
75 pcs On Request 1 On Request On Request 0538 On Request On Request

JAN2N3500 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current - Collector (Ic) (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Power - Max
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
Voltage - Collector Emitter Breakdown

JAN2N3500 Description

Short technical summary and product information.

The JAN2N3500 from Microchip Technology is an NPN bipolar junction transistor (BJT) designed for various electronic applications. It offers a high collector-emitter breakdown voltage of 150V and can handle a continuous collector current of up to 300mA. The transistor has a maximum power dissipation of 1W.

 

This component features a Vce saturation voltage of 400mV at 15mA collector current and 150mA base current, with a minimum DC current gain (hFE) of 40 at 150mA collector current and 10V collector-emitter voltage. The operating temperature range is from -65°C to 200°C (TJ).

 

The JAN2N3500 is packaged in a TO-39 metal can and is designed for through-hole mounting, making it suitable for traditional PCB assembly processes. Its specifications make it a reliable choice for amplification and switching applications where robust performance is required.

 

Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status, though these are noted as unverified.

JAN2N3500 Quick Information

Product Type: Bipolar Transistor
Canonical Name: JAN2N3500 NPN Bipolar Transistor
Subcategory: Bipolar Transistor

JAN2N3500 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

JAN2N3500 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

JAN2N3500 Features

  • 150V collector-emitter breakdown voltage.
  • 300mA continuous collector current.
  • 1W maximum power dissipation.
  • Wide -65°C to 200°C operating temperature.
  • Through-hole mounting in TO-39 package.

JAN2N3500 Applications

  • Suitable for amplification circuits.
  • Used in general switching applications.
  • Reliable for high voltage designs.
  • Robust performance in demanding environments.

JAN2N3500 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter breakdown voltage for the JAN2N3500?

The maximum collector-emitter breakdown voltage is 150V.

What is the continuous collector current rating?

The continuous collector current rating is 300mA.

What is the Vce saturation voltage at 15mA/150mA?

The Vce saturation voltage is 400mV at 15mA collector current and 150mA base current.

What is the minimum DC current gain (hFE) at 150mA/10V?

The minimum DC current gain (hFE) is 40 at 150mA collector current and 10V collector-emitter voltage.

What is the maximum power dissipation?

The maximum power dissipation is 1W.

What is the operating temperature range?

The operating temperature range is -65°C to 200°C (TJ).

How is the JAN2N3500 transistor mounted?

The JAN2N3500 is designed for through-hole mounting.

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