JANTXV2N3500
NES
The JANTXV2N3500 is an NPN transistor from NES. It features a maximum power dissipation of 1W and a collector-emitter breakdown voltage of 150V.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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149 pcs
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149 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Military Grade | |
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| SVHC Present |
The JANTX2N3421S is a high-performance NPN bipolar junction transistor (BJT) manufactured by Microchip Technology. Designed for robust applications, this transistor offers a collector-emitter breakdown voltage of 80V and can handle a maximum continuous collector current of 3A.
Key electrical characteristics include a minimum DC current gain (hFE) of 40 at 1A and 2V, and a Vce saturation of 500mV maximum at 200mA and 2A. The device operates within a wide temperature range of -65°C to 200°C.
Packaged in a TO-39 (TO-205AD) metal can, the JANTX2N3421S is suitable for through-hole mounting. Its specifications make it a reliable choice for power switching and amplification circuits where durability and performance are critical.
This transistor is qualified under MIL-PRF-19500/393, indicating its suitability for military and demanding industrial applications. Its robust construction and reliable performance characteristics ensure consistent operation in challenging environments.
| Qty | Low | High |
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| 1+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (Ic) for the JANTX2N3421S is 3 A.
The collector-emitter breakdown voltage (Vceo) for the JANTX2N3421S is 80 V.
The JANTX2N3421S operates within a temperature range of -65°C to 200°C.
The JANTX2N3421S is supplied in a TO-39 (TO-205AD) metal can package.
The JANTX2N3421S is designed for through-hole mounting.
