| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
24 pcs
|
24 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Military Grade | |
| Mounting Type | |
| SVHC Present |
The JANTX2N2369A is an NPN Silicon Transistor manufactured by National Semiconductor, qualified per MIL-PRF-19500/317. This device is housed in a TO-18 (TO-206AA) through-hole package.
Key electrical characteristics include a Collector-Emitter Voltage (VCEO) of 15 Vdc for the 2N2369A variants and 20 Vdc for the 2N4449 variants, and a Collector-Base Voltage (VCBO) of 40 Vdc. The transistor offers a minimum Forward-Current Transfer Ratio (hFE) of 40 at IC = 10mAdc, VCE = 0.35Vdc, and a maximum of 120. The Collector-Emitter Saturation Voltage (VCE(sat)) is a maximum of 0.20 Vdc at IC = 10mAdc, IB = 1.0mAdc.
With a Total Power Dissipation (PT) of 0.36W at TA = +25°C, and an operating and storage junction temperature range of -65 to +200 °C, this transistor is suitable for various electronic circuits. The thermal resistance (RθJA) is 400 °C/W.
This component is qualified per MIL-PRF-19500/317, indicating its suitability for demanding applications. Its specifications make it a reliable choice for amplification and switching tasks in electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Collector-Emitter Voltage (VCEO) is 15 Vdc for the 2N2369A variants and 20 Vdc for the 2N4449 variants.
The Collector-Base Voltage (VCBO) is 40 Vdc.
The minimum Forward-Current Transfer Ratio (hFE) is 40 at IC = 10mAdc, VCE = 0.35Vdc.
The operating and storage junction temperature range is -65 to +200 °C.
The JANTX2N2369A is available in a TO-18 package.