JANSR2N7422U

The Vishay Dale JANSR2N7422U is a P-channel RAD Hard HEXFET power MOSFET utilizing IR HiRel RADHard™ HEXFET® MOSFET technology. This device is specifically designed for high-reliability space applications and has been characterized for both Total Dose and Single Event Effects (SEE). It features a breakdown voltage of -100V and a low static drain-to-source on-resistance as low as 0.080Ω typical. The MOSFET has a continuous drain current rating of -22A at 25°C and -14A at 100°C. Its low RDS(on) and low gate charge contribute to reduced power losses in switching applications like DC to DC converters and motor control.

The device is hermetically sealed and comes in a surface mount ceramic package (SMD-1). It operates over a temperature range of -55°C to +150°C. The JANSR2N7422U is proton tolerant and offers simple drive requirements, making it suitable for demanding environments. Its features include single event effect (SEE) hardening, low total gate charge, and an ESD rating of Class 2 per MIL-STD-750.

Key electrical characteristics include a gate threshold voltage between -2V and -4V, and a forward transconductance of 11S typical. The maximum power dissipation is rated at 150W at 25°C. The device also includes avalanche energy ratings for single pulse and repetitive events, along with a peak diode recovery dv/dt rating.