JANTXV2N3019
NES
The NES JANTXV2N3019 is an NPN bipolar transistor in a TO-5 package. It offers a collector-emitter breakdown voltage of 80V and a maximum collector current of 1A.
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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The JANSR2N3439L from Microsemi Corporation is a single NPN bipolar junction transistor. It is designed for through-hole mounting and comes in a TO-205AA, TO-5-3 Metal Can package.
Key electrical specifications include a maximum collector-emitter breakdown voltage of 350V and a maximum collector current of 1A. The device has a maximum power dissipation of 800mW. Its DC current gain (hFE) is a minimum of 40 at 20mA and 10V. The saturation voltage (Vce) is a maximum of 500mV at 4mA and 50mA, with a collector cutoff current of 2μA maximum.
This transistor operates within a temperature range of -65°C to 200°C. It is suitable for applications requiring robust performance and reliability in demanding environments. The through-hole mounting makes it easy to integrate into existing circuit designs.
Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status, though these are noted as having low confidence and require verification.
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
350V maximum.
1A.
TO-205AA (TO-5-3 Metal Can).
-65°C to 200°C.
Minimum 40 at 20mA, 10V.
800mW maximum.