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JANTXV2N3019 The NES JANTXV2N3019 is an NPN bipolar transistor in a TO-5 package. It offers a collector-emitter breakdown voltage of 80V and a maximum collector current of 1A.
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JANTXV2N3019

Available from 1 distributors
Mfr Name: NES
NES
The NES JANTXV2N3019 is an NPN bipolar transistor in a TO-5 package. It offers a collector-emitter breakdown voltage of 80V and a maximum collector current of 1A.
✓ Total Stock: 8 pcs
$ Price Range: $0.11

JANTXV2N3019 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Bristol Electronics ✓
Non-Authorised Inventory information
8 pcs
On Request
8 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

JANTXV2N3019 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Industrial Grade
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation
Transistor Type
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JANTXV2N3019 Description

Short technical summary and product information.

This JANTXV2N3019 is a military-grade NPN bipolar junction transistor manufactured by NES. It is designed for through-hole mounting and comes in a TO-5 metal can package. Key electrical specifications include a maximum collector current of 1A and a collector-emitter breakdown voltage of 80V. The device has a maximum power dissipation of 800mW and an operating temperature range from -65°C to 200°C.

 

This transistor is qualified under MIL-PRF-19500/391, indicating its suitability for demanding applications. The bulk packaging is standard for this component. Its RoHS3 compliance status is noted, though confidence is low due to unverified data.

 

Ideal for general-purpose amplification and switching applications where military-grade performance is required. The through-hole mounting makes it suitable for traditional PCB assembly processes.

JANTXV2N3019 Quick Information

Product Type: NPN Transistor
Series: JANTXV2N3019
Canonical Name: NES JANTXV2N3019 NPN Transistor
Subcategory: Single

JANTXV2N3019 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

JANTXV2N3019 Estimated Pricing

Qty Low High
1+ $0.11 $0.11

Estimated market price range - modelled values for guidance only, not live distributor offers.

JANTXV2N3019 Features

  • Military grade JANTXV qualification.
  • NPN bipolar transistor type.
  • 80V collector-emitter breakdown voltage.
  • 1A maximum collector current.
  • TO-5 metal can package.

JANTXV2N3019 Applications

  • Suitable for high-reliability applications.
  • General-purpose amplification tasks.
  • Switching applications requiring robustness.
  • Designed for military environments.

JANTXV2N3019 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector current of the JANTXV2N3019?

1 A.

What is the collector-emitter breakdown voltage?

80 V.

What is the operating temperature range?

-65°C to 200°C (junction temperature).

What package does the JANTXV2N3019 come in?

TO-205AA, TO-5-3 Metal Can (through-hole).

What is the DC current gain (hFE) of this transistor?

Minimum 50 at 500 mA collector current and 10 V collector-emitter voltage.

What military qualification does the JANTXV2N3019 meet?

MIL-PRF-19500/391.

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