| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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70 pcs
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70 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The JANS2N5666U3/TR from Microchip Technology is a high-performance NPN bipolar junction transistor (BJT). It is designed for power applications, offering a maximum continuous collector current of 5A and a collector-emitter voltage of 200V.
This transistor has a power dissipation rating of 1.2W and a minimum DC current gain (hFE) of 40 at 1A collector current and 5V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 1V at 1A collector current. It operates within a wide temperature range of -65°C to 200°C (TJ).
The JANS2N5666U3/TR is housed in a 3-SMD, No Lead surface mount package, making it suitable for automated assembly processes. The mounting type is Surface Mount, and it comes in the U3 supplier device package.
This component is suitable for various power switching and amplification applications where robust performance and a wide operating temperature range are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 200V.
The continuous current rating is 5A.
The power dissipation is 1.2W.
The operating temperature range is -65°C to 200°C (TJ).
It is a surface mount device.