| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,222 pcs
|
3222 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The JAN2N3767 is a Power Silicon Transistor manufactured by Microchip Technology. This NPN bipolar junction transistor (BJT) is designed for applications requiring robust performance, with a maximum collector current of 4A and a maximum power dissipation of 25W.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 80V and a collector-base voltage (VCBO) of 100V. The transistor offers a minimum DC current gain (hFE) of 40 at 500mA and 5V, with a saturation voltage (Vce Sat) of 2.5V at 100mA and 1A.
This component is suitable for through-hole mounting and comes in a TO-213AA, TO-66-2 package, also referred to as TO-66 (TO-213AA). The operating temperature range is from -65°C to 200°C.
While the product is listed as RoHS Non-Compliant, it has a Moisture Sensitivity Level (MSL) of 1 Unlimited and is REACH Unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current is 4A.
The maximum power dissipation is 25W.
The operating temperature range is -65°C to 200°C.
The collector-emitter voltage (VCEO) is 80V.
The mounting type is Through Hole.
The RoHS status of JAN2N3767 is Non-Compliant.