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JAN1N5809US/TR DIODE GP 100V 3A SQ-MELF B
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JAN1N5809US/TR

Mfr Name: Microchip Technology
Microchip Technology
DIODE GP 100V 3A SQ-MELF B
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JAN1N5809US/TR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Capacitance @ Vr, F
Current
Mounting Type
Operating Temperature
Reverse Recovery Time (trr)
Speed
Supplier Device Package
Technology
Voltage
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JAN1N5809US/TR Description

Short technical summary and product information.
DIODE GP 100V 3A SQ-MELF B

JAN1N5809US/TR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

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