1N5811US The 1N5811US is a 150V, 3A ultrafast recovery rectifier diode from Microchip Technology in a surface mount SQ-MELF package.
Mfr Part #:

1N5811US

Available from 2 distributors
Mfr Name: Microchip Technology
Microchip Technology
The 1N5811US is a 150V, 3A ultrafast recovery rectifier diode from Microchip Technology in a surface mount SQ-MELF package.
Total Stock: 10,004 pcs

1N5811US Available from 2 distributors

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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10,000 pcs
10000 pcs On Request 1 On Request On Request On Request On Request 2026-06-29 21:33:16
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4 pcs
4 pcs On Request 1 On Request On Request On Request On Request On Request

1N5811US Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Capacitance @ Vr, F
Current
Current - Average Rectified (Io)
Diode Type
Forward Surge Current (IFSM)
Military Grade
Mounting Type
Operating Temperature
Operating Temperature - Junction
Package / Case
Reverse Recovery Time (trr)
Speed
Supplier Device Package
Technology
Thermal Resistance (Junction-to-End Cap)
Thermal Resistance Junction-to-Ambient
Voltage
Voltage - DC Reverse (Vr) (Max)
Voltage - Forward (Vf) (Max) @ If

1N5811US Description

Short technical summary and product information.

The 1N5811US is a high-reliability ultrafast recovery rectifier diode from Microchip Technology, designed for demanding applications. It features a working peak reverse voltage of 150V and an average rectified current of 3A. The device offers a fast reverse recovery time of 30ns and a low forward voltage drop of 875mV at 4A, making it suitable for high-frequency switching circuits.

 

This diode is hermetically sealed in a void-less glass SQ-MELF package (B case) with surface mount mounting. It has a junction operating temperature range of -65°C to 175°C and a forward surge current capability of 125A. Thermal resistance is specified at 6.5°C/W junction-to-end cap and 52°C/W junction-to-ambient.

 

Typical applications include switching power supplies, military and aerospace electronics, and other high-reliability systems requiring fast switching and low forward losses. The part is available in commercial and military (JAN, JANTX, JANTXV, JANS) grades per MIL-PRF-19500/477.

1N5811US Quick Information

Product Type: Rectifier Diode
Series: 1N5807US/1N5809US/1N5811US
Canonical Name: 1N5811US Ultrafast Recovery Rectifier Diode
Subcategory: Ultrafast Recovery Rectifier

1N5811US Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

1N5811US Features

  • 150V working peak reverse voltage.
  • 3A average rectified current rating.
  • 30ns ultrafast reverse recovery time.
  • 875mV forward voltage at 4A.
  • Hermetic SQ-MELF surface mount package.

1N5811US Applications

  • High-frequency switching power supplies.
  • Military and aerospace power systems.
  • Ultrafast rectification circuits.
  • High-reliability industrial electronics.

1N5811US FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage of the 1N5811US?

The maximum working peak reverse voltage (Vr) is 150V.

What is the average forward current rating?

The average rectified current (Io) is 3A.

What is the forward voltage drop?

The maximum forward voltage (Vf) is 875mV at 4A.

What is the reverse recovery time?

The reverse recovery time (trr) is 30ns.

What package does the 1N5811US come in?

It comes in a surface mount SQ-MELF, B package (also known as B, SQ-MELF).

What is the operating temperature range?

The junction operating temperature range is -65°C to 175°C.

What is the forward surge current capability?

The forward surge current (Ifsm) is 125A.

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