| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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23 pcs
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23 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IXGY2N120 is an IGBT transistor manufactured by IXYS, designed for power switching applications. It features a high collector-emitter breakdown voltage of 1200V and a maximum continuous collector current of 5A.
The device has a collector-emitter saturation voltage of 3V at 15V gate-emitter voltage and 2A collector current. The maximum gate-emitter voltage is rated at 20V. With a maximum power dissipation of 25W, it is suitable for various power electronics circuits.
The IXGY2N120 is packaged in a TO-252AA-3 surface mount package, facilitating integration into compact PCB designs. Its maximum operating temperature is 150°C, ensuring reliable performance under demanding conditions. The component is RoHS compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO Max) for the IXGY2N120 is 1200V.
The IXGY2N120 has a maximum continuous collector current of 5A.
The maximum operating temperature for the IXGY2N120 is 150°C.
The IXGY2N120 is available in a TO-252AA-3 package, which is a surface mount type.
The RoHS status for the IXGY2N120 is RoHS3 Compliant.
