| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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70 pcs
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70 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BD375 is an NPN Epitaxial Silicon Transistor manufactured by STMicroelectronics. It is designed for medium power and switching applications.
Key electrical specifications include a collector-emitter voltage (Uce) of 45V and a collector-base voltage (Ucb) of 50V. The continuous collector current (Ic) is rated at 2A, with a power dissipation (N) of 25W. The transistor exhibits a current gain (hFE) ranging from 40 to 375.
This component is available in both TO-126 and SSOP package types, with surface mount capability. It operates within a temperature range of -40°C to 85°C. The manufacturer page also lists operating voltage parameters between 7V and 9.5V, with a maximum output current of 500mA and an operating supply current of 38mA.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (Uce) for the BD375 is 45V.
The maximum continuous collector current (Ic) for the BD375 is 2A.
The power dissipation (N) for the BD375 is 25W.
The current gain (hFE) for the BD375 ranges from 40 to 375.
The BD375 is available in TO-126 and SSOP package types.
The BD375 operates within a temperature range of -40°C to 85°C.