| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,092 pcs
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2092 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| FET Type | |
| Tape & Reel |
The IRLML6402 from Shikues Semiconductor is a P-Channel MOSFET designed for general-purpose applications. It features a drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 3A at 25°C.
The MOSFET has a gate threshold voltage (Vgs(th)) of 1V at 250uA and a maximum drain-source on-resistance (Rds(on)) of 120 mOhm at 3A and 4.5V gate-source voltage. These electrical characteristics make it suitable for switching and amplification tasks.
Packaged in a compact SOT-23 surface-mount case, the IRLML6402 is designed for efficient integration into printed circuit boards. Its P-Channel configuration allows for easy interface with common logic levels in many electronic designs.
This component is identified by its part number IRLML6402 and is manufactured by Shikues Semiconductor. It falls under the category of discrete semiconductor products, specifically single transistors, FETs, and MOSFETs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) of the IRLML6402 MOSFET is 20V.
The continuous drain current (Id) for the IRLML6402 is 3A at 25°C.
The gate threshold voltage (Vgs(th)) of the IRLML6402 is 1V at 250uA.
The drain-source on-resistance (Rds(on)) of the IRLML6402 is a maximum of 120 mOhm at 3A and 4.5V.
The IRLML6402 is a P-Channel MOSFET.
The IRLML6402 MOSFET is supplied in a SOT-23 package.