| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
59 pcs
|
59 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| FET Type | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Power Dissipation | |
| Tape & Reel |
The AP3P3R0MT is a P Channel MOSFET from APEC, designed for various electronic applications. It offers a drain-source voltage of 30V and a continuous drain current of 60A at 25°C.
Key electrical characteristics include a maximum power dissipation of 5W and a low on-resistance of 3 mOhms at 20A and 10V. The gate threshold voltage is specified at 3V with a drain current of 250uA.
This MOSFET is housed in a PMPAK-5X6 package, suitable for surface-mount applications. Its P Channel trench technology ensures efficient performance in power switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.46 | $1.46 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Voltage for the AP3P3R0MT is 30V.
The Continuous Drain Current is 60A (Tc).
The Gate Threshold Voltage is 3V @ 250uA.
The On-Resistance is 3 mOhms at 20A and 10V.
The maximum power dissipation is 5W.
The AP3P3R0MT is a P Channel FET.
The AP3P3R0MT is supplied in a PMPAK-5X6 package.