| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
61,020 pcs
|
61020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
65 pcs
|
65 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| Tape & Reel |
The Infineon IRLML5203TRPBF is a P-channel HEXFET Power MOSFET utilizing advanced processing techniques for extremely low on-resistance per silicon area. This efficiency makes it suitable for battery and load management applications.
The device is housed in a thermally enhanced, industry-smallest footprint Micro3™ package (SOT-23), ideal for space-constrained designs like portable electronics and PCMCIA cards. Its low profile of less than 1.1mm allows easy integration into thin environments.
Key electrical characteristics include a Drain-Source Voltage (VDS) of -30V, a continuous drain current (ID) of -3.0A at 25°C (VGS = -10V), and a maximum on-resistance (RDS(on)) of 98mΩ at VGS = -10V. The operating temperature range is -55°C to +150°C.
This MOSFET is lead-free and RoHS compliant, making it suitable for modern electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is -30 V.
The IRLML5203TRPBF is available in a Micro3 (SOT-23) surface-mount package.
The junction and storage temperature range is -55°C to +150°C.
Continuous drain current is -3.0 A at 25°C and -2.4 A at 70°C with VGS = -10V.
The maximum on-resistance is 98 mΩ at VGS = -10V.
The maximum pulsed drain current is -24 A.
The maximum power dissipation at 25°C is 1.25 W.
