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IPB160N04S4-H1 The Infineon IPB160N04S4-H1 is an N-channel OptiMOS®-T2 Power MOSFET designed for high-performance applications. It offers a 40V drain-source breakdown voltage and a maximum on-state resistance of 1.6 mΩ.
Mfr Part #:

IPB160N04S4-H1

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon IPB160N04S4-H1 is an N-channel OptiMOS®-T2 Power MOSFET designed for high-performance applications. It offers a 40V drain-source breakdown voltage and a maximum on-state resistance of 1.6 mΩ.
✓ Total Stock: 6,750 pcs
$ Price Range: $2.40

IPB160N04S4-H1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
6,750 pcs
On Request
6750 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPB160N04S4-H1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Halogen Free
Lead Style
Mounting Type
Power Dissipation
Reverse Recovery Time
SVHC Present
Tape & Reel
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IPB160N04S4-H1 Description

Short technical summary and product information.

The Infineon IPB160N04S4-H1 is an N-channel enhancement mode OptiMOS®-T2 Power MOSFET. It features a drain-source breakdown voltage of 40V and an ultra-low Rds(on) of 1.6 mΩ at a continuous drain current of 160A. This AEC qualified component operates at temperatures up to 175°C.

 

The MOSFET is housed in a PG-TO263-7-3 package, suitable for surface mounting. Key electrical characteristics include a gate threshold voltage between 2.0V and 4.0V, and dynamic parameters such as input capacitance (Ciss) up to 10920 pF and output capacitance (Coss) up to 2700 pF.

 

Designed for demanding applications, the IPB160N04S4-H1 boasts 100% avalanche tested and a green product designation, indicating RoHS compliance. Its thermal resistance from junction to case (RthJC) is 0.9 K/W, allowing for efficient heat dissipation.

IPB160N04S4-H1 Quick Information

Product Type: Power MOSFET
Series: OptiMOS®-T2
Canonical Name: Infineon IPB160N04S4-H1 N-channel Power MOSFET
Subcategory: N-Channel Power MOSFET

IPB160N04S4-H1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IPB160N04S4-H1 Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB160N04S4-H1 Features

  • N-channel enhancement mode MOSFET.
  • 40V drain-source breakdown voltage.
  • 1.6 mΩ maximum drain-source on-state resistance.
  • 160A continuous drain current.
  • AEC qualified and RoHS compliant.

IPB160N04S4-H1 Applications

  • Automotive applications.
  • High-efficiency power switching.
  • DC-DC converters.
  • Motor control circuits.

IPB160N04S4-H1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 40V.

What is the maximum on-state resistance?

The maximum drain-source on-state resistance is 1.6 mΩ.

What is the continuous drain current?

The continuous drain current is 160A.

What is the operating temperature range?

The operating and storage temperature range is -55°C to +175°C.

What package is the IPB160N04S4-H1 in?

The component is supplied in a PG-TO263-7-3 package.

Is this MOSFET AEC qualified?

Yes, the IPB160N04S4-H1 is AEC qualified.

What is the RoHS status?

The RoHS status is RoHS3 Compliant.

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