IRF520NPBF
Infineon
The Infineon IRF520NPBF is an N-channel HEXFET Power MOSFET designed for efficiency and reliability. It features a 100V breakdown voltage and a low on-resistance of 0.20 Ohms.
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113 pcs
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113 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRL520N from Vishay Dale is a fifth-generation HEXFET Power MOSFET utilizing advanced processing techniques for extremely low on-resistance per silicon area. This device offers a continuous drain current of 10A at 25°C with a Vgs of 10V, and a drain-to-source breakdown voltage of 100V. Its low on-resistance, rated at 0.18 Ohms typical at Vgs = 10V and Id = 6.0A, combined with fast switching speeds and a ruggedized design, makes it suitable for a wide variety of applications.
The IRL520N is housed in a TO-220AB package, which is widely preferred for commercial-industrial applications due to its low thermal resistance and cost-effectiveness. This package is suitable for power dissipation levels up to approximately 48W. The MOSFET operates across a junction temperature range of -55°C to +175°C and features a logic-level gate drive, advanced process technology, dynamic dv/dt rating, and is fully avalanche rated.
Key electrical characteristics include a gate threshold voltage of 1.0V typical, forward transconductance of 3.1S typical, and a continuous drain current of 7.1A at 100°C. The device also specifies pulsed drain current up to 35A and avalanche current of 6.0A. Its fast switching performance is indicated by turn-on delay time of 4.0ns typical and fall time of 22ns typical.
This MOSFET is designed for efficiency and reliability in applications requiring high-performance switching and power handling. The TO-220AB package facilitates easy through-hole mounting.
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Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current for the IRL520N is 10A at 25°C case temperature with a Vgs of 10V.
The drain-to-source breakdown voltage (Vds_br) for the IRL520N is a minimum of 100V.
The typical on-resistance (Rds_on) for the IRL520N is 0.18 Ohms when Vgs is 10V and Id is 6.0A.
The operating junction and storage temperature range for the IRL520N is -55°C to +175°C.
The IRL520N is supplied in the TO-220AB package.