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IRF520NPBF The Infineon IRF520NPBF is an N-channel HEXFET Power MOSFET designed for efficiency and reliability. It features a 100V breakdown voltage and a low on-resistance of 0.20 Ohms.
Mfr Part #:

IRF520NPBF

Available from 3 distributors
Mfr Name: Infineon
Infineon
The Infineon IRF520NPBF is an N-channel HEXFET Power MOSFET designed for efficiency and reliability. It features a 100V breakdown voltage and a low on-resistance of 0.20 Ohms.
✓ Total Stock: 17,706 pcs
$ Price Range: $1.21

IRF520NPBF Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
16,520 pcs
On Request
16520 pcs On Request 1 On Request On Request On Request On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,056 pcs
On Request
1056 pcs On Request 1 On Request On Request On Request On Request On Request
Fe Components ✓
Non-Authorised Inventory information
130 pcs
On Request
130 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IRF520NPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Industrial Grade
Lead Spacing
Medical Grade
Military Grade
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Power Dissipation
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IRF520NPBF Description

Short technical summary and product information.

The Infineon IRF520NPBF is a fifth-generation HEXFET Power MOSFET utilizing advanced processing techniques for extremely low on-resistance per silicon area. This device offers fast switching speeds and a ruggedized design, making it suitable for a wide variety of applications.

 

Key electrical specifications include a continuous drain current of 9.7A at 25°C, a pulsed drain current of 38A, and a drain-to-source breakdown voltage of 100V. The static drain-to-source on-resistance is a maximum of 0.20 Ohms at a gate-to-source voltage of 10V and a drain current of 5.7A. The gate threshold voltage ranges from 2.0V to 4.0V.

 

This MOSFET is housed in a universally preferred TO-220AB package, which is ideal for commercial-industrial applications with power dissipation levels up to approximately 50 watts. The low thermal resistance and cost of the TO-220 package contribute to its wide acceptance. The operating junction and storage temperature range is -55°C to +175°C.

IRF520NPBF Quick Information

Product Type: N-channel MOSFET
Canonical Name: Infineon IRF520NPBF N-channel HEXFET Power MOSFET
Subcategory: N-Channel

IRF520NPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRF520NPBF Estimated Pricing

Qty Low High
1+ $1.21 $1.21

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF520NPBF Features

  • N-channel HEXFET Power MOSFET
  • 100V Drain-to-Source Breakdown Voltage
  • 0.20 Ohm Max On-Resistance
  • 9.7A Continuous Drain Current
  • TO-220AB Package

IRF520NPBF Applications

  • Used in power supply switching circuits
  • Suitable for motor control applications
  • Ideal for high-current switching devices
  • Applicable in electronic circuit amplification

IRF520NPBF FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum continuous drain current of the IRF520NPBF?

The maximum continuous drain current at 25°C is 9.7A.

What is the drain-to-source breakdown voltage of the IRF520NPBF?

The drain-to-source breakdown voltage is 100V.

What package does the IRF520NPBF come in?

It is packaged in a TO-220AB case.

What is the maximum gate-to-source voltage for the IRF520NPBF?

The maximum gate-to-source voltage is ±20V.

What is the maximum power dissipation of the IRF520NPBF?

The maximum power dissipation is 48W at 25°C.

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