| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,645 pcs
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2645 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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6 pcs
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6 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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| Manufacturer Name | |
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| Tape & Reel |
The Infineon IRL3803PBF is an N-channel power MOSFET from the Fifth Generation HEXFET family. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area, combined with fast switching speeds and a ruggedized device design. This makes it an efficient and reliable component for various applications.
Key electrical specifications include a Drain-to-Source Breakdown Voltage of 30V and a maximum Static Drain-to-Source On-Resistance of 0.006Ω at VGS = 10V and ID = 71A. The continuous drain current is rated at 140A at TC = 25°C and 98A at TC = 100°C. The Gate Threshold Voltage is a minimum of 1V.
This MOSFET is housed in a TO-220AB package, which is widely used in commercial and industrial applications for power dissipation levels up to approximately 50 watts. The low thermal resistance and cost-effectiveness of the TO-220 package contribute to its industry acceptance. The operating junction and storage temperature range is -55°C to +175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage is 30V minimum.
The package is TO-220AB.
The operating junction temperature range is -55 to +175°C.
The continuous drain current is 140A at 25°C case temperature.
The static drain-to-source on-resistance is 6mΩ maximum at VGS=10V, ID=71A.
The gate threshold voltage is 1V minimum at VDS=VGS, ID=250µA.
The maximum power dissipation is 200W at 25°C case temperature.