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690 pcs
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690 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NGTG12N60TF1G is an N-Channel Insulated Gate Bipolar Transistor (IGBT) manufactured by ON Semiconductor. It is designed for applications requiring high voltage and current handling capabilities, featuring a collector-emitter voltage (Vces) of 600V and a continuous DC collector current (Ic) of 12A at 100°C.
Key electrical characteristics include a typical collector-emitter saturation voltage (Vce(sat)) of 1.4V at 12A and 15V gate-emitter voltage, contributing to low switching losses, particularly beneficial in higher frequency applications. The device also boasts a 5μs short circuit capability.
This IGBT is housed in a TO-3PF-3L package, suitable for through-hole mounting. Its thermal resistance from junction to case is 2.33°C/W under ideal heat dissipation conditions, with a junction temperature rating of 150°C.
Applications for the NGTG12N60TF1G include power factor correction in white goods appliances and general-purpose inverters, where its robust performance and isolation-type package are advantageous.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V maximum.
24A at Tc=25°C, 12A at Tc=100°C.
TO-3PF-3L.
Maximum junction temperature 150°C, storage temperature range -55 to +150°C.
1.4V typical at VGE=15V, IC=12A, Tc=25°C.
84nC typical at VCE=300V, VGE=15V, IC=15A.
Turn-on time 330ns, turn-off time 350ns typical.