| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
40 pcs
|
40 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
29 pcs
|
29 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Storage Temperature |
The IRL3803 is an N-Channel Power MOSFET designed for efficient power management applications. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area, combined with fast switching speeds and a ruggedized device design.
Key electrical specifications include a drain-source breakdown voltage (VDSS) of 30V and a continuous drain current (ID) of 140A at 25°C. The typical on-resistance (RDS(on)) is 5.5mΩ, with a maximum of 6mΩ specified. The device can handle pulsed drain currents up to 470A and has a maximum gate-to-source voltage of ±16V.
Thermal characteristics include a junction-to-case thermal resistance of 0.75°C/W and a junction-to-ambient thermal resistance of 40°C/W for PCB-mounted steady-state conditions. The operating and storage temperature range is -55°C to +175°C.
The IRL3803 is available in both D2Pak surface mount and TO-262 low-profile through-hole packages, making it suitable for a wide variety of applications requiring high current capability and efficient power dissipation.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
D2Pak (surface mount) and TO-262 (through hole).
-55°C to +175°C.
140A at 25°C case temperature (110A at 100°C).
5.5mOhm.
200W at case temperature 25°C.