IRG4PC50UPBF
Vishay
The Vishay Dale IRG4PC50UPBF is an UltraFast Speed IGBT Transistor with a 600V collector-to-emitter breakdown voltage. It is housed in an industry-standard TO-247AC package.
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94 pcs
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94 pcs | On Request | 1 | On Request | On Request | 2000 | On Request | On Request |
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The Infineon Technologies IRGPH20M is a short circuit rated, fast Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-current applications. It features a maximum collector-emitter voltage (VCES) of 1200V and a continuous collector current (IC) of 6.9A at 25°C, with a maximum power dissipation (PD) of 60W at 25°C.
This IGBT is optimized for medium operating frequencies between 1 to 10kHz and is particularly suited for motor control and other applications requiring short circuit withstand capability. The device operates within a junction and storage temperature range of -55°C to +150°C.
Key electrical characteristics include a collector-emitter saturation voltage (VCE(sat)) of less than or equal to 4.6V at 4.5A and a gate-to-emitter voltage (VGE) of ±20V. Switching characteristics such as turn-on delay time, rise time, turn-off delay time, and fall time are specified, along with switching losses.
The IRGPH20M is packaged in a TO-247AC case, suitable for through-hole mounting. Thermal resistance from junction-to-case is 2.1°C/W, and case-to-sink is 0.24°C/W.
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| 1+ | $6.44 | $6.44 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCES) for the IRGPH20M is 1200V.
The continuous collector current (IC) at 25°C for the IRGPH20M is 6.9A.
The maximum power dissipation (PD) at 25°C for the IRGPH20M is 60W.
The operating junction and storage temperature range for the IRGPH20M is -55°C to +150°C.
The IRGPH20M is supplied in a TO-247AC package.
The collector-emitter saturation voltage (VCE(sat)) is less than or equal to 4.6V at VGE = 15V and IC = 4.5A.
The short circuit withstand time (tsc) is 10µs.
