| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,365 pcs
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1365 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
The Vishay Dale IRG4PC50UPBF is an n-channel IGBT transistor designed for high operating frequencies, optimized for 8-40 kHz in hard switching and over 200 kHz in resonant mode. This Generation 4 IGBT offers improved efficiency and tighter parameter distribution compared to previous generations.
Key electrical specifications include a 600V collector-to-emitter breakdown voltage (VCES) and a continuous collector current (IC) of 55A at 25°C and 27A at 100°C. The typical gate-to-emitter voltage (VGE) is ±20V. Switching characteristics are detailed, with turn-on delay times around 32ns and fall times around 130ns at 25°C.
Thermal performance is supported by a junction-to-case thermal resistance (RθJC) of 0.64°C/W. The component is supplied in the industry-standard TO-247AC package, suitable for through-hole mounting. Absolute maximum ratings include a maximum power dissipation of 200W at 25°C and an operating junction temperature range of -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-to-emitter breakdown voltage (VCES) is 600V.
The continuous collector current (IC) at 25°C is 55A.
The IRG4PC50UPBF is supplied in the TO-247AC package.
The operating junction temperature range is -55°C to +150°C.
The junction-to-case thermal resistance (RθJC) is 0.64°C/W.