| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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658 pcs
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658 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current Rating | |
| Power Dissipation | |
| Reverse Recovery Time |
The Infineon IRGP30B120KD-EP is a single Insulated Gate Bipolar Transistor (IGBT) designed for robust performance in demanding applications. This component offers a high collector-emitter voltage rating of 1200V and a continuous collector current rating of 60A, making it suitable for power switching and control circuits.
Key electrical characteristics include a typical collector-emitter saturation voltage of 4V, a maximum power dissipation of 120W, and a typical power dissipation of 300W. The transistor also exhibits typical rise and fall times of 35ns and 75ns, respectively, along with a reverse recovery time of 300ns, indicating efficient switching performance.
Operating within a wide temperature range from -55°C to 150°C, the IRGP30B120KD-EP is housed in a TO-247-3 package and utilizes a through-hole mounting type. Its specifications make it a reliable choice for various industrial power electronics applications where high voltage and current handling are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1200V
60A
4V
TO-247-3 through-hole package
-55°C to 150°C
Rise time 35ns, fall time 75ns, reverse recovery time 300ns
