| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,800 pcs
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8800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRGP30B120KD from Vishay Dale is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for power electronic applications. It features a high collector-emitter voltage rating of 1200V and a continuous collector current rating of 60A.
This IGBT offers a typical collector-emitter saturation voltage of 4V and a maximum power dissipation of 120W, with a typical power dissipation of 300W. It operates within a temperature range of -55°C to 150°C.
The device is packaged in a TO-247-3 through-hole configuration, making it suitable for various power switching circuits. Its specifications, including a reverse recovery time of 300ns, rise time of 35ns, and fall time of 75ns, indicate its suitability for applications requiring efficient power handling and switching.
Key electrical characteristics include a 1.2kV Vce rating and a 60A Ic rating, supported by a maximum power dissipation of 120W. The operating temperature range from -55°C to 150°C ensures reliability in demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating for the IRGP30B120KD is 1.2kV.
The continuous collector current for the IRGP30B120KD is 60A.
The IRGP30B120KD operates between -55°C and 150°C.
The IRGP30B120KD is supplied in a TO-247-3 package.