TMBT3906.LMT
Toshiba
The Toshiba TMBT3906.LMT is a single bipolar junction transistor (BJT) in the Transistors - Bipolar (BJT) - Single category. It is RoHS3 Compliant and has an MSL rating of 1 Unlimited.
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190 pcs
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190 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale IRG4PSH71KD is an UltraFast Insulated Gate Bipolar Transistor (IGBT) designed for applications requiring high voltage and current handling capabilities. It features a collector-emitter breakdown voltage of 1200V and a continuous collector current of 78A.
This IGBT is optimized for motor control and offers minimum switching losses combined with low conduction losses. It is built with a hole-less clip, pressure mount package compatible with TO-247 and TO-264 standards, and reinforced pins. The device is rated for high short circuit conditions and includes an ultrafast soft recovery diode.
Key electrical characteristics include its 1200V Vce rating and 78A Ic continuous current. The UltraFast switching speed makes it suitable for operating frequencies typically in the range of 8 to 40 kHz, although specific operating frequency details require datasheet confirmation. The TO-274AA package is designed for through-hole mounting.
Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are currently unverified. The manufacturer mismatch flag highlights a discrepancy between the part number's typical manufacturer (Infineon/International Rectifier) and the listed manufacturer (Vishay Dale), warranting verification.
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| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 1200V.
The continuous collector current is 78A.
This IGBT features UltraFast switching speed.
It is supplied in a TO-274AA package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.