TCR2EF33LMCT
Toshiba
The Toshiba TCR2EF33LMCT is a 200 mA CMOS low dropout regulator with a fixed 3.3V output. It offers low dropout voltage and fast load transient response.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,388 pcs
|
9388 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
189 pcs
|
189 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Storage Temperature |
The IRFZ48N from Vishay Dale is a Fifth Generation HEXFET Power MOSFET utilizing advanced processing techniques for extremely low on-resistance per silicon area. This device offers fast switching speeds and a ruggedized design, making it suitable for a wide variety of applications.
Key electrical specifications include a continuous drain current of 53A at 25°C and 37A at 100°C, with a pulsed drain current up to 210A. The power dissipation is rated at 94W at 25°C. It features a low static drain-to-source on-resistance of 0.016 Ohms at 10V gate-to-source voltage and 32A drain current. The drain-to-source breakdown voltage is a minimum of 55V.
This MOSFET is housed in a TO-220AB package, which is widely preferred for commercial-industrial applications due to its low thermal resistance and cost-effectiveness. The operating junction and storage temperature range is -55°C to +175°C. Thermal resistance from junction-to-case is 1.6°C/W, and junction-to-ambient is 62°C/W.
Advanced processing technology, dynamic dv/dt rating, 175°C operating temperature, fast switching, and full avalanche rating are key design features. The device is suitable for applications requiring efficient power handling and reliable performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous drain current is 53A at 25°C and 37A at 100°C.
The maximum power dissipation is 94W at 25°C.
The static drain-to-source on-resistance is a maximum of 0.016 Ohms under test conditions of VGS = 10V and ID = 32A.
The operating junction and storage temperature range is -55°C to +175°C.
The IRFZ48N is supplied in a TO-220AB package.