| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,050 pcs
|
2050 pcs | On Request | 1 | On Request | On Request | 08+ | On Request | On Request | |
|
99 pcs
|
99 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Storage Temperature |
The IRFZ34N from Vishay Dale is an N-Channel HEXFET Power MOSFET. This device is engineered for high efficiency and fast switching speeds, making it suitable for a wide range of applications. It features a breakdown voltage of 55V and a low on-resistance (RDS(on)) of 40mΩ at a continuous drain current rating of 29A.
The MOSFET is housed in a TO-220AB package, which is a common choice for commercial and industrial applications with power dissipation up to approximately 50 watts. The TO-220AB package is designed for through-hole mounting.
Key electrical characteristics include an input capacitance of 700pF and a gate threshold voltage of 4V. The device also specifies rise and fall times of 49ns and 40ns, respectively. Its maximum power dissipation is rated at 56W, with an operating temperature range from -55°C to 175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
55V.
29A.
40mΩ.
-55°C to 175°C.
TO-220AB through-hole package.
4V.
56W.