IRFS4615PBF
Infineon Technologies
N-Channel MOSFET with 150V drain-source voltage and 33A continuous drain current. Features low on-resistance of 42mOhm max and D2PAK surface mount package.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,420 pcs
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7420 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFS4615TRLPBF is a 150V N-Channel Power MOSFET from Infineon Technologies, part of the HEXFET family. It features a low typical on-resistance of 34.5 mOhm at 10V gate drive, with a maximum of 42 mOhm. The device can handle continuous drain current up to 33A at 25°C case temperature and 24A at 100°C. Pulsed drain current capability is 140A. The gate charge is 40 nC maximum at 10V, and input capacitance is 1750 pF at 50V drain-source voltage. The MOSFET is designed for high efficiency synchronous rectification in SMPS, uninterruptible power supplies, high speed power switching, and hard switched high frequency circuits. It is avalanche rated with a single pulse avalanche energy of 109 mJ. The device is surface mounted in a D2PAK (TO-263) package, which provides excellent thermal performance with a junction-to-case thermal resistance of 1.045 °C/W. The operating junction temperature range is -55°C to 175°C. The part is lead-free and RoHS3 compliant (unverified).
150V.
D2PAK (TO-263) surface mount package.
-55°C to 175°C junction temperature.
RoHS3 Compliant (unverified). Lead-free confirmed by datasheet.
33A at 25°C case temperature, 24A at 100°C.
Typical 34.5 mOhm, maximum 42 mOhm at Vgs=10V, Id=21A.
40 nC maximum at Vgs=10V.