IRFS4615TRLPBF
Infineon Technologies
N-Channel MOSFET from Infineon Technologies with 150V drain-source breakdown voltage and 33A continuous drain current. Surface mount D2PAK package.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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77 pcs
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77 pcs | On Request | 1 | On Request | On Request | 1619 | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs(th) (Max) @ Id |
The IRFS4615PBF is an N-Channel power MOSFET from Infineon Technologies, designed for high-efficiency power switching applications. It offers a drain-source voltage rating of 150V and a continuous drain current of 33A at 25°C case temperature. The device features a typical on-resistance of 34.5mOhm and a maximum of 42mOhm at Vgs=10V, enabling low conduction losses.
Key electrical characteristics include a gate threshold voltage range of 3.0V to 5.0V, a total gate charge of 40nC, and an input capacitance of 1750pF at 50V Vds. The MOSFET is rated for power dissipation up to 144W and operates over a junction temperature range of -55°C to 175°C. It also features enhanced body diode dV/dt and dI/dt capability.
The device is housed in a D2PAK (TO-263-3) surface mount package with a low thermal resistance of 1.045°C/W junction-to-case. It is lead-free and RoHS compliant. Typical applications include high efficiency synchronous rectification in switched-mode power supplies, uninterruptible power supplies, high speed power switching, and hard switched or high frequency circuits.
150V.
34.5mOhm typical, 42mOhm maximum at Id=21A, Vgs=10V.
3.0V minimum to 5.0V maximum at Id=100µA.
33A at Tc=25°C.
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB (D2PAK).
-55°C to 175°C junction temperature.
RoHS3 compliant (unverified).