| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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225 pcs
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225 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The IRFR6215 from Infineon Technologies is a P-Channel HEXFET Power MOSFET utilizing advanced process technology for low on-resistance and fast switching speeds. This device is rated for a continuous drain current of -13A at 25°C and a drain-source breakdown voltage of -150V.
Key electrical characteristics include a static drain-to-source on-resistance of 0.295Ω at VGS = -10V and ID = -6.6A. The operating junction and storage temperature range is -55°C to +175°C.
The IRFR6215 is available in a D-Pak surface mount package, designed for compatibility with vapor phase, infrared, or wave soldering techniques. It is fully avalanche rated, making it suitable for a variety of power management applications where efficiency and ruggedness are critical.
This MOSFET is built with a lead-free construction and operates at 175°C maximum junction temperature. Its advanced process technology ensures high performance in demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-150V
-13A
0.295Ω
-55 to +175°C
D-Pak
RoHS3 Compliant
1 Unlimited