| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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410 pcs
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410 pcs | On Request | 1 | On Request | On Request | 103 | On Request | On Request |
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| Tape & Reel |
The IRFR120N from Infineon Technologies is a high-performance N-channel HEXFET Power MOSFET. It is engineered with advanced processing techniques to achieve low on-resistance and fast switching speeds, making it suitable for a variety of applications.
Key electrical specifications include a drain-source breakdown voltage (VDS) of 100V and a continuous drain current (ID) of 9.4A at 25°C case temperature. The on-resistance (RDS(on)) is rated at 0.21 Ohms when VGS is 10V and ID is 5.6A. The device operates with a gate-to-source voltage range of ±20V and has a gate threshold voltage typically around 2V.
This MOSFET is designed for surface mounting and comes in a TO-252AA (D-PAK) package. It offers robust performance with a maximum power dissipation of 48W at 25°C and a wide operating junction temperature range from -55°C to +175°C. The device is fully avalanche rated, providing enhanced reliability in demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage of the IRFR120N is 100V.
The maximum continuous drain current at 25°C is 9.4A.
The IRFR120N is packaged in a TO-252AA surface mount package.
The maximum gate-to-source voltage is ±20V.
The RDS(on) is 0.21Ω at VGS = 10V and ID = 5.6A.
The operating junction and storage temperature range is from -55°C to +175°C.
Yes, it is RoHS3 compliant.