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435 pcs
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435 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFR120 is a third-generation N-Channel Power MOSFET from Intersil, designed to provide a balance of fast switching, ruggedness, and low on-resistance. It features a maximum drain-source voltage of 100V and a continuous drain current of 7.7A at 25°C (Tc).
This MOSFET is available in the DPAK (TO-252) surface-mount package, suitable for wave, vapor phase, or infrared soldering techniques. It offers a low on-resistance of 0.27 Ω at Vgs = 10V, contributing to efficient power dissipation. The device also boasts a maximum power dissipation of 42W at 25°C (Tc) and 2.5W when mounted on a 1" square PCB.
Key electrical characteristics include a gate-source voltage rating of ±20V, a pulsed drain current of 31A, and a single pulse avalanche energy of 210 mJ. The operating junction and storage temperature range is -55°C to +150°C.
The IRFR120 is suitable for various power switching applications where efficiency and reliability are critical. Its surface-mount DPAK package makes it convenient for integration into compact designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the IRFR120 is 100V.
The continuous drain current of the IRFR120 is 7.7A at 25°C (Tc) with Vgs = 10V.
The typical on-resistance (RDS(on)) of the IRFR120 is 0.27Ω when the gate-source voltage is 10V.
The IRFR120 is available in the DPAK (TO-252) package, designed for surface mounting.
The operating junction and storage temperature range for the IRFR120 is -55°C to +150°C.