IRFP360PBF N-Channel Power MOSFET with 400V drain-source voltage and 23A continuous drain current. Features low on-resistance of 200mΩ at 10V gate drive.
Mfr Part #:

IRFP360PBF

Available from 4 distributors
Mfr Name: Vishay
Vishay
N-Channel Power MOSFET with 400V drain-source voltage and 23A continuous drain current. Features low on-resistance of 200mΩ at 10V gate drive.
✓ Total Stock: 21,971 pcs
$ Price Range: $1.38

IRFP360PBF Available from 4 distributors

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12,168 pcs
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7,000 pcs
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IRFP360PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFP360PBF Description

Short technical summary and product information.

The IRFP360PBF is an N-Channel Power MOSFET designed for high-power switching applications. It features a drain-source breakdown voltage of 400V and a continuous drain current of 23A at 25°C case temperature. The device offers a maximum on-resistance of 200mΩ when driven with 10V gate voltage, ensuring efficient power handling.

 

Key electrical characteristics include a maximum gate charge of 210nC and an input capacitance of 4500pF, enabling fast switching performance. The MOSFET is rated for repetitive avalanche energy up to 28mJ and single pulse avalanche energy of 1200mJ, providing ruggedness in inductive switching environments. The peak diode recovery dV/dt is 4.0 V/ns.

 

The device is housed in a TO-247-3 (TO-247AC) through-hole package with an isolated mounting hole, simplifying heatsink attachment. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 280W at 25°C. The linear derating factor is 2.2 W/°C.

IRFP360PBF Quick Information

Product Type: Power MOSFET
Canonical Name: IRFP360PBF N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

IRFP360PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

IRFP360PBF Estimated Pricing

Qty Low High
1+ $1.38 $1.38

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFP360PBF Features

  • N-Channel Power MOSFET with 400V drain-source voltage.
  • Continuous drain current rating of 23A at 25°C.
  • Low on-resistance of 200mΩ at 10V gate drive.
  • High input capacitance of 4500pF for fast switching.
  • Rugged design with repetitive avalanche capability.

IRFP360PBF Applications

  • Ideal for high-power switching power supplies.
  • Suitable for motor control and inverter circuits.
  • Used in industrial power conversion systems.
  • Applicable for DC-DC converters and battery chargers.

IRFP360PBF FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IRFP360PBF?

The maximum drain-source voltage (Vdss) is 400V.

What is the continuous drain current rating?

The continuous drain current is 23A at Tc = 25°C.

What package does the IRFP360PBF come in?

It comes in a TO-247AC through-hole package.

Is the IRFP360PBF lead-free?

Yes, it is lead (Pb)-free.

What is the typical gate charge of this MOSFET?

The typical total gate charge (Qg) is 210 nC at Vgs = 10V.

IRFP360PBF Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
View All Alternate Parts
IRFP360
IRFP360
Vishay
N-Channel Power MOSFET with 400V drain-source voltage and 23A continuous drain current. Features low on-resistance of 200mΩ and fast switching.
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