IRFP360PBF
Vishay
N-Channel Power MOSFET with 400V drain-source voltage and 23A continuous drain current. Features low on-resistance of 200mΩ at 10V gate drive.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFP360 is an N-Channel Power MOSFET from Vishay, designed for high-voltage switching applications. It offers a drain-source voltage rating of 400V and a continuous drain current of 23A at 25°C case temperature.
With a maximum on-resistance of 200mΩ at 10V gate drive, this MOSFET provides efficient power conversion. The total gate charge is 210nC, enabling fast switching. It is avalanche rated with single pulse avalanche energy of 1200mJ.
Housed in a TO-247-3 through-hole package (TO-247AC), it is suitable for commercial-industrial applications requiring higher power levels. The isolated mounting hole simplifies heatsink attachment. Operating temperature range is -55°C to 150°C.
This device is suitable for switch-mode power supplies, motor drives, and other power conversion circuits. Its rugged design and ease of paralleling make it a versatile choice for medium-power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.88 | $3.88 |
| 10+ | $3.48 | $3.48 |
| 25+ | $3.26 | $3.26 |
| 50+ | $3.03 | $3.03 |
| 100+ | $2.72 | $2.72 |
| 500+ | $2.50 | $2.50 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
TO-247-3 (TO-247AC) through-hole package.
-55°C to 150°C (junction).
RoHS3 compliant per product data, but unverified. Datasheet notes parts may be RoHS-compliant or non-compliant depending on terminations.
400V.
23A at Tc=25°C, 14A at Tc=100°C.
200mΩ maximum at Id=14A, Vgs=10V.
210nC maximum at Vgs=10V.