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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFP360 is a third-generation N-Channel Power MOSFET from Vishay, offering a combination of fast switching, rugged design, and low on-resistance. It is housed in a TO-247 package, which is suitable for commercial-industrial applications requiring higher power levels than TO-220 devices. The TO-247 package provides an isolated central mounting hole and greater creepage distance.
Key electrical specifications include a Drain-Source Breakdown Voltage (VDS) of 400V and a typical On-Resistance (RDS(on)) of 0.20 Ω at VGS = 10V. The continuous drain current (ID) is rated at 23A at 25°C case temperature and 14A at 100°C. The device also features a maximum power dissipation of 280W and an operating junction temperature range of -55°C to +150°C.
This MOSFET is designed for applications requiring fast switching and robust performance. Its features like dynamic dV/dt rating and repetitive avalanche rating make it suitable for demanding power applications. The TO-247 package facilitates easier paralleling and simple drive requirements.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Breakdown Voltage (VDS) for the IRFP360 is 400V.
The typical On-Resistance (RDS(on)) of the IRFP360 is 0.20 Ohms when VGS is 10V and Id is 23A.
The continuous drain current (ID) for the IRFP360 is 23A at a case temperature of 25°C and 14A at 100°C.
The IRFP360 is supplied in a TO-247 package.
The IRFP360 operates between -55°C and +150°C for both junction and storage temperatures.
