| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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| Tape & Reel |
The Infineon IRFP260MPBF is an N-channel power MOSFET designed with advanced process technology for high efficiency and reliability. It offers a continuous drain current of 50A at 25°C and 35A at 100°C, with a maximum pulsed drain current of 200A.
Key electrical specifications include a drain-to-source breakdown voltage of 200V and a low static drain-to-source on-resistance of 0.04 Ohms at a gate-to-source voltage of 10V and drain current of 28A. The gate threshold voltage ranges from 2V to 4V. The device operates across a wide temperature range from -55°C to +175°C.
This MOSFET is suitable for various applications requiring high power handling and fast switching. It is supplied in the TO-247AD package, which is preferred for industrial applications with higher power levels compared to TO-220 devices. The TO-247 package features an isolated mounting hole for improved thermal management.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.96 | $3.96 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 50A at 25°C and 35A at 100°C.
The drain-to-source breakdown voltage is 200V.
The static drain-to-source on-resistance is a maximum of 0.04 Ohms.
The operating junction and storage temperature range is -55°C to +175°C.
The IRFP260MPBF is supplied in the TO-247AD package.
Yes, the RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.