| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,400 pcs
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2400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The Infineon Technologies IRFM250 is a high-reliability N-channel HEXFET Power MOSFET designed for demanding applications. It offers a breakdown voltage (BVDSS) of 200V and a continuous drain current (ID) of 27.4A.
This MOSFET utilizes advanced HEXFET technology, providing simple drive requirements, fast switching, and excellent parameter stability. Its hermetically sealed TO-254AA package is electrically isolated, improving thermal efficiency and reducing drain capacitance, making it suitable for direct heatsink mounting.
Potential applications include DC-DC converters and motor drives where high reliability is essential. The device is qualified to JANTXV screening flow according to MIL-PRF-19500 for high-reliability applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (BVDSS) for the IRFM250 is 200V.
The continuous drain current (ID) for the IRFM250 is 27.4A.
The maximum on-resistance (RDS(on)) for the IRFM250 is 100mΩ.
The IRFM250 is available in a TO-254AA through-hole package.
The RoHS status of the IRFM250 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the IRFM250 is 1 Unlimited.