| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4 pcs
|
4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Storage Temperature | |
| Tape & Reel |
The Vishay Dale IRFM250 is an N-channel HEXFET Power MOSFET designed for high-reliability applications. It offers a 200V drain-source breakdown voltage (BVDSS) and can handle a continuous drain current (ID) of up to 27.4A. The MOSFET exhibits a maximum on-resistance (RDS(on)) of 100mΩ and a maximum gate charge (QG) of 115nC.
This device is housed in a hermetically sealed TO-254AA through-hole package, which is electrically isolated and improves thermal efficiency. Its simple drive requirements and fast switching characteristics make it suitable for various power applications.
Potential applications include DC-DC converters and motor drives where robust performance and high reliability are essential. The product is qualified to JANTXV screening flow according to MIL-PRF-19500 for high-reliability requirements.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (BVDSS) for the IRFM250 is 200V.
The IRFM250 has a continuous drain current (ID) rating of 27.4A.
The maximum on-resistance (RDS(on)) for the IRFM250 is 100mΩ.
The IRFM250 is supplied in a TO-254AA package.
The IRFM250 has a through-hole mounting type.