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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies IRFM240 is an N-channel HEXFET Power MOSFET designed for high-reliability applications. It utilizes advanced HEXFET technology for efficient geometry and low on-state resistance.
Key electrical specifications include a maximum drain-source voltage of 200V and a continuous drain current of 18A. The on-resistance is a maximum of 18 mOhm at a gate-source voltage of 10V and a drain current of 18A.
This MOSFET is suitable for applications requiring simple drive requirements, fast switching, and electrical parameter temperature stability. Potential applications include DC-DC converters and motor drives. The hermetically sealed TO-254AA package is electrically isolated, improving thermal efficiency and reducing drain capacitance.
Product validation is qualified to JANTXV screening flow according to MIL-PRF-19500 for high-reliability applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 200V.
The continuous drain current is 18A.
The maximum on-resistance is 18 mOhm.
The IRFM240 is in a TO-254AA package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.